BSB028N06NN3GXUMA2
Part Number:
BSB028N06NN3GXUMA2
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Infineon Technologies
Description:
TRENCH 40<-<100V
Packaging:
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- FET Feature -
- Grade -
- Qualification -
- Drain to Source Voltage (Vdss) 60 V
- Operating Temperature -40°C ~ 150°C (TJ)
- Package / Case DirectFET™ Isometric MN
- Gate Charge (Qg) (Max) @ Vgs 143 nC @ 10 V
- Rds On (Max) @ Id, Vgs 2.8mOhm @ 30A, 10V
- Current - Continuous Drain (Id) @ 25°C 22A (Ta), 90A (Tc)
- Vgs(th) (Max) @ Id 4V @ 102µA
- Input Capacitance (Ciss) (Max) @ Vds 12000 pF @ 30 V
- Power Dissipation (Max) 2.2W (Ta), 78W (Tc)
- Supplier Device Package MG-WDSON-5-3