BSB165N15NZ3GXUMA2

BSB165N15NZ3GXUMA2

Part Number: BSB165N15NZ3GXUMA2
Product Classification: Single FETs, MOSFETs
Manufacturer: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
ROHS Status: Yes
Currency: USD
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -40°C ~ 150°C (TJ)
  • Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
  • Drain to Source Voltage (Vdss) 150 V
  • Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
  • Current - Continuous Drain (Id) @ 25°C 9A (Ta), 45A (Tc)
  • Package / Case DirectFET™ Isometric MZ
  • Vgs(th) (Max) @ Id 4V @ 110µA
  • Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
  • Rds On (Max) @ Id, Vgs 16.5mOhm @ 30A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 75 V
  • Supplier Device Package MG-WDSON-2-9