CSD19538Q2R

CSD19538Q2R

Part Number: CSD19538Q2R
Product Classification: Single FETs, MOSFETs
Manufacturer: Texas Instruments
Description: 100-V, N CHANNEL NEXFET POWER MO
Packaging: Tape & Reel (TR)
ROHS Status: Yes
Currency: USD
PDF: Documents

Specification

  • Part Status Active
  • Mounting Type Surface Mount
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100 V
  • Vgs (Max) ±20V
  • FET Feature -
  • Grade -
  • Qualification -
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
  • Package / Case 6-WDFN Exposed Pad
  • Supplier Device Package 6-WSON (2x2)
  • Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 10 V
  • Vgs(th) (Max) @ Id 3.8V @ 250µA
  • Rds On (Max) @ Id, Vgs 59mOhm @ 5A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds 454 pF @ 50 V
  • Power Dissipation (Max) 2.5W (Ta), 20.2W (Tc)
  • Current - Continuous Drain (Id) @ 25°C 4.6A (Ta), 13.1A (Tc)