DMWSH120H80SM3

DMWSH120H80SM3

Part Number: DMWSH120H80SM3
Product Classification: Single FETs, MOSFETs
Manufacturer: Diodes Incorporated
Description: SICFET N-CH 1200V TO-247
Packaging: Tube
ROHS Status: Yes
Currency: USD
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade -
  • Qualification -
  • Package / Case TO-247-3
  • Drain to Source Voltage (Vdss) 1200 V
  • Supplier Device Package TO-247
  • Technology SiCFET (Silicon Carbide)
  • Current - Continuous Drain (Id) @ 25°C 44.5A (Tc)
  • Power Dissipation (Max) 238W (Tc)
  • Vgs(th) (Max) @ Id 3.5V @ 5mA
  • Vgs (Max) +22V, -10V
  • Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
  • Rds On (Max) @ Id, Vgs 80.5mOhm @ 20A, 18V
  • Gate Charge (Qg) (Max) @ Vgs 59.1 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds 1069 pF @ 1000 V