DMWSH120H90SCT7Q-13
Part Number:
DMWSH120H90SCT7Q-13
Product Classification:
Single FETs, MOSFETs
Manufacturer:
Diodes Incorporated
Description:
SICFET N-CH 1200V TO-247
Packaging:
Tape & Reel (TR)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Supplier Device Package TO-263-7
- Drain to Source Voltage (Vdss) 1200 V
- Drive Voltage (Max Rds On, Min Rds On) 15V
- Technology SiCFET (Silicon Carbide)
- Vgs(th) (Max) @ Id 3.5V @ 5mA
- Vgs (Max) +19V, -8V
- Rds On (Max) @ Id, Vgs 90mOhm @ 20A, 15V
- Power Dissipation (Max) 197W (Tc)
- Current - Continuous Drain (Id) @ 25°C 38.2A (Tc)
- Gate Charge (Qg) (Max) @ Vgs 54.6 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 1078 pF @ 1000 V