GT023N10Q

GT023N10Q

Part Number: GT023N10Q
Product Classification: Single FETs, MOSFETs
Manufacturer: Goford Semiconductor
Description: MOSFET N-CH 100V 226A 250W TO-2
Packaging: Tube
ROHS Status: Yes
Currency: USD
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100 V
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Vgs (Max) ±20V
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade -
  • Qualification -
  • Package / Case TO-247-3
  • Power Dissipation (Max) 250W (Tc)
  • Rds On (Max) @ Id, Vgs 2.7mOhm @ 80A, 10V
  • Supplier Device Package TO-247
  • Gate Charge (Qg) (Max) @ Vgs 121 nC @ 10 V
  • Current - Continuous Drain (Id) @ 25°C 226A (Tc)
  • Input Capacitance (Ciss) (Max) @ Vds 8488 pF @ 50 V