NVC160N120SC1
Part Number:
NVC160N120SC1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
onsemi
Description:
SILICON CARBIDE MOSFET, NCHANNEL
Packaging:
Bulk
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Part Status Discontinued at
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Operating Temperature -55°C ~ 175°C (TJ)
- Grade Automotive
- Qualification AEC-Q101
- Current - Continuous Drain (Id) @ 25°C 17A (Tc)
- Package / Case Die
- Supplier Device Package Die
- Drain to Source Voltage (Vdss) 1200 V
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Technology SiCFET (Silicon Carbide)
- Power Dissipation (Max) 119W (Tc)
- Vgs (Max) +25V, -15V
- Rds On (Max) @ Id, Vgs 224mOhm @ 12A, 20V
- Vgs(th) (Max) @ Id 4.3V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs 34 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 665 pF @ 800 V