NVXK2KR80WDT

NVXK2KR80WDT

Part Number: NVXK2KR80WDT
Product Classification: Single FETs, MOSFETs
Manufacturer: onsemi
Description: ELITESIC POWER MODULE FOR OBC, 8
Packaging: Bulk
ROHS Status: Yes
Currency: USD
PDF: Documents

Specification

  • Mounting Type Through Hole
  • Part Status Discontinued at
  • FET Type N-Channel
  • FET Feature -
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Grade Automotive
  • Qualification AEC-Q101
  • Current - Continuous Drain (Id) @ 25°C 20A (Tc)
  • Power Dissipation (Max) 82W (Tc)
  • Drain to Source Voltage (Vdss) 1200 V
  • Drive Voltage (Max Rds On, Min Rds On) 20V
  • Technology SiC (Silicon Carbide Junction Transistor)
  • Gate Charge (Qg) (Max) @ Vgs 56 nC @ 20 V
  • Vgs (Max) +25V, -15V
  • Input Capacitance (Ciss) (Max) @ Vds 1154 pF @ 800 V
  • Vgs(th) (Max) @ Id 4.3V @ 10mA
  • Package / Case 32-PowerDIP Module (1.311", 33.30mm)
  • Supplier Device Package APM32
  • Rds On (Max) @ Id, Vgs 116mOhm @ 20A, 20V