SCT2H12NWBTL1
Part Number:
SCT2H12NWBTL1
Product Classification:
Single FETs, MOSFETs
Manufacturer:
ROHM Semiconductor
Description:
SICFET N-CH 1700V 4A TO268
Packaging:
Cut Tape (CT)
ROHS Status:
Yes
Currency:
USD
PDF:
Documents
Specification
- Part Status Active
- Mounting Type Surface Mount
- FET Type N-Channel
- FET Feature -
- Grade -
- Qualification -
- Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Power Dissipation (Max) 39W (Tc)
- Operating Temperature 175°C (TJ)
- Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
- Technology SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss) 1700 V
- Drive Voltage (Max Rds On, Min Rds On) 18V
- Vgs (Max) +22V, -6V
- Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.1A, 18V
- Vgs(th) (Max) @ Id 4V @ 410µA
- Gate Charge (Qg) (Max) @ Vgs 24 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds 197 pF @ 800 V
- Supplier Device Package TO-263CA-7LSHYAD