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3.3 kV SiC MOSFET: MSC027SMA330D Performance Summary
Point: Recent measured trends show high-voltage SiC devices delivering substantially faster switching and lower combined losses versus legacy IGBTs, enabling smaller passive networks and higher power …
MSC025SMA330D SiC MOSFET: Independent Performance Report
Point: The device headline: a high-voltage SiC MOSFET rated for 3.3 kV with a low milliohm on-resistance and a high current capability forms the test subject. Evidence: Independent bench tests measure…
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